![]() (Fig.3) The highest multilevel flash memory cell in mass production is the 4-bit per cell. In a single memory cell with 7-bit per cell, 128 (27) Vth distributions can be created. (Fig.2) As a result, it is easier to achieve larger multi-levels in a cell. Cryogenic operation and single-crystal channel can greatly minimize read noise. (Fig.1) In the read operation, the threshold voltage (Vth) of memory cell is determined and converted into bit information, but there is a fluctuation in Vth called the read noise. The traditional poly-silicon used for the channel of the memory cell transistor was replaced by single-crystal silicon. In a previous article, we discussed how BiCS FLASHTM (3D flash memory) performed at cryogenic temperatures and demonstrated a 6-bit per cell with better storage performance. This time, by combining cryogenic operation with silicon process technology that can improve memory cell characteristics, we have advanced one step and successfully demonstrated the world’s first 7-bit per cell. Bit cost scaling of flash memory is attributed to stacking memory cells in more layers in the 3D direction and storing more signal levels, i.e. This has been realized by the continuous bit-cost scaling of flash memory. ![]() In addition, SSDs outperform HDDs in data read/write speed, power usage, and device size. Currently, these massive amounts of data are stored on high-capacity servers and in data centers, which primarily use HDDs and SSDs. The global data sphere, a term used to describe the entire quantity of digital data generated every day worldwide, is predicted to reach 175 ZB by 2025. ![]()
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